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| New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 60 RDS(on) () 0.0195 at VGS = - 10 V 0.025 at VGS = - 4.5 V TO-220AB FEATURES ID (A)a - 53 - 42 Qg (Typ.) 76 nC * TrenchFET(R) Power MOSFET * 100 % UIS Tested RoHS COMPLIANT APPLICATIONS * Load Switch S G DRAIN connected to TAB GDS Top View Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IAS EAS IS ID Symbol VDS VGS Limit - 60 20 - 53a - 46.8 9.2b - 8.1b - 150 - 45 101 69 a Unit V A mJ A 2.1b 104.2a 66.7a 3.1b 2.0b - 55 to 150 W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. Steady State Steady State Symbol RthJA RthJC Typical 33 0.98 Maximum 40 1.2 Unit C/W Document Number: 68633 S-80897-Rev. A, 21-Apr-08 www.vishay.com 1 New Product SUP53P06-20 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = - 50 A, di/dt = 100 A/s, TJ = 25 C IS = - 30 A - 1.0 45 59 29 16 TC = 25 C - 69 - 150 - 1.5 68 120 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 2.0 V, RL = 2.0 ID - 10 A, VGEN = - 10 V, Rg = 1 f = 1 MHz VDS = - 30 V, VGS = - 10 V, ID = - 55 A VDS = - 30 V, VGS = - 4.5 V, ID = - 55 A VDS = - 25 V, VGS = 0 V, f = 1 MHz 3500 390 290 76 38 16 19 5.2 10 7 70 40 15 15 110 60 ns 115 60 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 60 V, VGS = 0 V VDS = - 60 V, VGS = 0 V, TJ = 55 C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 30 A VGS = - 4.5 V, ID = - 20 A VDS = - 15 V, ID = - 50 A 20 - 120 0.016 0.020 0.0195 0.025 -1 - 60 68 - 5.2 -3 100 -1 - 10 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68633 S-80897-Rev. A, 21-Apr-08 New Product SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 200 VGS = 10 thru 6 V 160 ID - Drain Current (A) ID - Drain Current (A) VGS = 5 V 120 80 100 60 80 VGS = 4 V 40 TC = 125 C TC = 25 C TC = - 55 C 0 40 VGS = 3 V 0 0 1 2 3 4 5 20 0 1 2 3 4 5 VDS - Drain-to-SourceVoltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 10 100 Transfer Characteristics TC = - 55 C 8 gfs - Transconductance (S) ID - Drain Current (A) 80 TC = 25 C 60 TC = 125 C 40 6 4 TC = 125 C 2 TC = 25 C TC = - 55 C 0 0 1 2 3 4 5 20 0 0 12 24 36 48 60 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 0.05 5000 Transconductance RDS(on) - On-Resistance () 0.04 C - Capacitance (pF) 4000 Ciss 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 3000 2000 1000 Coss Crss 0 10 20 30 40 50 60 0.00 0 20 40 60 80 100 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 68633 S-80897-Rev. A, 21-Apr-08 Capacitance www.vishay.com 3 New Product SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 ID = 55 A VGS - Gate-to-Source Voltage (V) RDS(on) - On-Resistance 8 VDS = 20 V VDS = 30 V 4 1.7 (Normalized) 2.0 ID = 20 A VGS = 10 V 6 1.4 VGS = 4.5 V 1.1 2 0.8 0 0 20 40 60 80 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 100 0.10 On-Resistance vs. Gate-to-Source Voltage ID = 20 A 0.08 RDS(on) - On-Resistance () IS - Source Current (A) TJ = 150 C TJ = 25 C 0.06 10 0.04 TJ = 150 C 0.02 TJ = 25 C 1 0.0 0.00 0.3 0.6 0.9 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1000 75 On-Resistance vs. Gate-to-Source Voltage ID = 10 mA 72 100 V(BR)DSS - (V) I Dav - (A) 69 10 66 IAV (A) at TJ = 25 C 1 63 IAV (A) at TJ = 150 C 0.1 0.0001 0.001 0.01 T in - (s) 0.1 1 60 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (C) Single Pulse Avalanche Current Capability vs. Time Drain-Source Breakdown Voltage vs. Junction Temperature www.vishay.com 4 Document Number: 68633 S-80897-Rev. A, 21-Apr-08 New Product SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.8 60 50 0.5 ID - Drain Current (A) V GS(th) Variance (V) ID = 250 A ID = 1 mA 40 0.2 30 20 - 0.1 10 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TJ - Temperature(C) Threshold Voltage 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Max. Drain Current vs. Case Temperature 1000 Limited by RDS(on)* 100 I D - Drain Current (A) 10 s Power (W) 100 s 10 1 ms 10 ms 100 ms, DC 1 TC = 25 C Single Pulse 0.1 0.1 BVDSS Limited TJ - Temperature (C) Power Derating, Junction-to-Case 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68633. Document Number: 68633 S-80897-Rev. A, 21-Apr-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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